Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
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| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Glascow :
University of Glascow,
2011
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| 005 | 20120410143400.0 | ||
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| 040 | |a UKM | ||
| 090 | |a TK7871.95.M845 2011 tesis 3 | ||
| 090 | |a TK7871.95 |b .M845 2011 | ||
| 100 | 0 | |a Muhammad Faiz Bukhori. | |
| 245 | 1 | 0 | |a Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability / |c Muhammad Faiz Bukhori. |
| 260 | |a Glascow : |b University of Glascow, |c 2011 | ||
| 300 | |a xix, 164 p. : |b ill. ; |c 30 cm. | ||
| 502 | |a Thesis (Ph. D.) - University of Glascow, 2011 | ||
| 650 | 0 | |a Metal oxide semiconductor field-effect transistors. | |
| 650 | 0 | |a Nanoelectronics. | |
| 650 | 0 | |a Semiconductors. | |
| 907 | |a .b15213729 |b 28-05-21 |c 12-11-19 | ||
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| 991 | |a Fakulti Kejuruteraan dan Alam Bina | ||
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