Ganiyev, S. (2015). Electrical characterization of 4H silicon carbide Schottky diodes under electron radiation. Kulliyyah of Engineering, International Islamic University Malaysia.
Chicago Style (17th ed.) CitationGaniyev, Sabuhi. Electrical Characterization of 4H Silicon Carbide Schottky Diodes Under Electron Radiation. Kuala Lumpur: Kulliyyah of Engineering, International Islamic University Malaysia, 2015.
MLA引文Ganiyev, Sabuhi. Electrical Characterization of 4H Silicon Carbide Schottky Diodes Under Electron Radiation. Kulliyyah of Engineering, International Islamic University Malaysia, 2015.
警告:这些引文格式不一定是100%准确.