Electrical characterization of 4H silicon carbide Schottky diodes under electron radiation /

Electronic components utilized in space missions are required to be radiation hard to maintain optimized electrical performance. Because of its wide bandgap, 4H-SiC based devices have been demonstrated to be the most suitable candidate for this purpose. This research investigates the effects of elec...

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書目詳細資料
主要作者: Ganiyev, Sabuhi
格式: Thesis
語言:English
出版: Kuala Lumpur : Kulliyyah of Engineering, International Islamic University Malaysia, 2015
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在線閱讀:http://studentrepo.iium.edu.my/handle/123456789/4742
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