Mahmud, M. (2016). Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation. Kulliyyah of Engineering, International Islamic University Malaysia.
Chicago Style (17th ed.) CitationMahmud, Manzar. Bit Flipping Effect on 6T, 7T and 10T Static Random Access Memory by TCAD Simulation. Gombak, Selangor: Kulliyyah of Engineering, International Islamic University Malaysia, 2016.
MLA引文Mahmud, Manzar. Bit Flipping Effect on 6T, 7T and 10T Static Random Access Memory by TCAD Simulation. Kulliyyah of Engineering, International Islamic University Malaysia, 2016.
警告:這些引文格式不一定是100%准確.