Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation /

Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation /

In space there are many high energetic particles and rays which potentially hazardous to microelectronic circuits and systems. The study of electrical characterization with radiation effect is important for any space exploration as high energetic particles and rays of space seriously limiting the re...

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書目詳細資料
主要作者:	Mahmud, Manzar
格式:	Thesis
語言:	English
出版:	Gombak, Selangor : Kulliyyah of Engineering, International Islamic University Malaysia, 2016
主題:	Static random access memory Theses, IIUM local
在線閱讀:	Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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