Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation /
In space there are many high energetic particles and rays which potentially hazardous to microelectronic circuits and systems. The study of electrical characterization with radiation effect is important for any space exploration as high energetic particles and rays of space seriously limiting the re...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
Gombak, Selangor :
Kulliyyah of Engineering, International Islamic University Malaysia,
2016
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| الموضوعات: | |
| الوصول للمادة أونلاين: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
| الوسوم: |
إضافة وسم
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