Bit flipping effect on 6T, 7T and 10T static random access memory by TCAD simulation /
In space there are many high energetic particles and rays which potentially hazardous to microelectronic circuits and systems. The study of electrical characterization with radiation effect is important for any space exploration as high energetic particles and rays of space seriously limiting the re...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
Gombak, Selangor :
Kulliyyah of Engineering, International Islamic University Malaysia,
2016
|
| 主題: | |
| 在線閱讀: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|