Development and characterization of integrated surface acoustic wave resonator on CMOS /
The rapid growth of the wireless communication industry has increased the need for more efficient and stable RF components. Surface Acoustic Wave (SAW) devices have been a key player in existing RF transceiver systems, functioning as a frequency synthesizer or as an RF filter. Surface Acoustic Wave...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
Kuala Lumpur:Kulliyyah of Engineering,
International Islamic University Malaysia,
2014
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| Subjects: | |
| Online Access: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
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| Summary: | The rapid growth of the wireless communication industry has increased the need for more efficient and stable RF components. Surface Acoustic Wave (SAW) devices have been a key player in existing RF transceiver systems, functioning as a frequency synthesizer or as an RF filter. Surface Acoustic Wave (SAW) devices have emerged as the most unique of RF passive components, having advantages of being small, rugged, lightweight and easily reproducible. A typical SAW device is composed of a piezoelectric substrate with thin-film metallic structures such as IDTs and reflectors deposited on top of the substrate's surface. This work presents development of integrated SAW resonator on CMOS which focused on the post-CMOS fabrication process, characterization and measurement. The post-CMOS fabrication process includes Reactive Ion Etching (RIE), deposition of piezoelectric layer and wet etching. For deposition of piezoelectric layer, Taguchi Optimization method was implemented to produce better result. After completion of the fabrication, characterization was done using XRD, FeSEM and SEM to evaluate the crystallinity quality. In the end, the result of the SAW resonator frequency response exhibits much better performance if the thickness of the piezoelectric layer is reduced with less loss.The end results improved the achievement of device in terms of Q-factor, insertion loss and coupling coefficient compared to previous work done. The Q-factor of 300 was achieved for this research and at the same time the loss was reduced to minimum of -6.13 dB and with the coupling coefficient of 5.4. |
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| Physical Description: | xix, 89 leaves : ill. ; 30cm. |
| Bibliography: | Includes bibliographical references (leaves 85-88). |