Comparative study of silicon nanowire fet-simulation and experimental /
The demands and expectations of high performance devices using transistors particularly Field Effect Transistors (FET), have increased day by day. In order to obtain such decreased size with increased speed and performance, device scaling was implemented. However, making FET in smaller size is not a...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
Gombak, Selangor :
Kulliyyah of Engineering,International Islamic University Malaysia,
2016
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| 主題: | |
| 在線閱讀: | http://studentrepo.iium.edu.my/handle/123456789/4413 |
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