Modelling of the reliability baseline for process control monitoring of kerf structures /
Miniaturization of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) beyond 0.1 μm has caused problems like short channel effect and leakage current which has lead to reliability issues. Therefore, reliability monitoring for miniaturized MOSFET is crucial in today's semiconductor indu...
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| 主要作者: | |
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
Kuala Lumpur:
Kulliyyah of Engineering, International Islamic University Malaysia,
2012
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| 主题: | |
| 在线阅读: | http://studentrepo.iium.edu.my/handle/123456789/5000 |
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