Development of empirical potential profile model for unusual energy separation of subbands in inidium-absorbed Si(111) inversion layer /

مواد مشابهة

• Extraction of submicron mosfet parameters /
  بواسطة: Seah, Kah Suan
  منشور في: (1997)
• Simulation of charge-trapping in nano-scale mosfets in the presence of random-dopants-induced variability /
  بواسطة: Muhammad Faiz Bukhori
  منشور في: (2011)
• New techniques for the characterization of hot-carrier degradation in MOS devices /
  بواسطة: Leang, Sern Ee
  منشور في: (1997)
• Optimization and characterization of 130 Nm CMOS transistor design using TCAD simulation /
  بواسطة: Hani Noorashiqin Abd Majid
  منشور في: (2007)
• Characterization of hot-carrier degradation in submicrometer MOS transistors /
  بواسطة: Ang, Diing Shenp
  منشور في: (1997)