Development of c-v fitting algorithm and electrical characterisation of Si and GaAs diodes under neutron irradiation /
Even with controlled doping of semiconductors, problems such as auto-doping may interfere and the doping profile may not turn out as designed. Thus, it is important to obtain the true characteristics of the grown diodes to provide support for device performance. In this study, a capacitance-voltage...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
Kuala Lumpur:
Kulliyyah of Engineering, International Islamic University Malaysia ,
2013
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| Subjects: | |
| Online Access: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
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| Summary: | Even with controlled doping of semiconductors, problems such as auto-doping may interfere and the doping profile may not turn out as designed. Thus, it is important to obtain the true characteristics of the grown diodes to provide support for device performance. In this study, a capacitance-voltage (C-V) fitting algorithm was developed using four region approximations. Doping and electric field profile are presented using MATLAB programming and graphical user interface (GUI). Results of C-V fittings showed good approximation to the mesa diodes measured C-V. Changes to electrical (I-V and C-V) characteristics of diodes may also be modified due to application in extreme radiation environment. Silicon (Si) and Gallium Arsenide (GaAs) commercial diodes were irradiated at low and high dose neutron radiation. Current-voltage (I-V) measurements at low dose irradiation show a decrease in forward (FB) and reverse bias (RB) leakage current of both Si diodes. This is believed to be due to the Si diodes used which are gold doped switching diodes. In FB, GaAs diodes showed no change in I-V and C-V after low dose irradiation however showed an increase in RB leakage current. At high dose irradiation, FB and RB leakage currents of all diodes increased after irradiation. Further analysis of C-V measurements showed effects of carrier removal due to neutron-induce displacement damage. The leakage current mechanism was found to be generation-recombination (G-R) and field-assisted Poole-Frenkel (P-F) by fitting the experimental results. The fitting showed that there is an increase in the G-R trap density and additional trap which is attributed to P-F emission. |
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| Physical Description: | xix, 114 leaves : ill. ; 30cm. |
| Bibliography: | Includes bibliographical references (leaves 99-105). |