Development of c-v fitting algorithm and electrical characterisation of Si and GaAs diodes under neutron irradiation /
Even with controlled doping of semiconductors, problems such as auto-doping may interfere and the doping profile may not turn out as designed. Thus, it is important to obtain the true characteristics of the grown diodes to provide support for device performance. In this study, a capacitance-voltage...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
Kuala Lumpur:
Kulliyyah of Engineering, International Islamic University Malaysia ,
2013
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| الموضوعات: | |
| الوصول للمادة أونلاين: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
| الوسوم: |
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