Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /
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| Format: | Thesis |
| Language: | English |
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| LEADER | 012720000a22002650004500 | ||
|---|---|---|---|
| 008 | 140703t2014 my a g m 000 0 eng d | ||
| 040 | |a UIAM |b eng |e rda | ||
| 041 | |a eng may | ||
| 050 | 0 | |a TK7871.99.M44 | |
| 100 | 0 | |a Rosminazuin binti Ab. Rahim, |e author | |
| 245 | 1 | 0 | |a Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor / |c by Rosminazuin Binti Ab Rahim |
| 300 | |a xiv, 53 leaves : |b illustrations ; |c 30 cm. | ||
| 336 | |2 rdacontent |a text | ||
| 337 | |2 rdamedia |a unmediated | ||
| 338 | |2 rdacarrier |a volume | ||
| 500 | |a "Thesis submitted in partial fulfilment for the degree of Master of Science Microelectronics."--On title page. | ||
| 502 | |a Thesis (Master of Science Microelectronics)--2014. | ||
| 504 | |a Includes bibliographical references (leaves 53). | ||
| 546 | |a Abstract in English and Malay. | ||
| 596 | |a 1 | ||
| 655 | 0 | 7 | |a Theses, IIUM foreign |
| 710 | 2 | |a Universiti Kebangsaan Malaysia. |b Faculty of Electric, Electronic and System Engineering | |
| 900 | |a hj-a jt | ||
| 999 | |c 438698 |d 469098 | ||
| 952 | |0 0 |6 T TK 007871.99 M44 R821S 2014 |7 0 |8 THESES |9 759753 |a IIUM |b IIUM |c MULTIMEDIA |g 0.00 |o t TK 7871.99 M44 R821S 2014 |p 11100323930 |r 2017-10-20 |t 1 |v 0.00 |y THESIS | ||