Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /

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Bibliographic Details
Main Author: Rosminazuin binti Ab. Rahim (Author)
Format: Thesis
Language:English
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008 140703t2014 my a g m 000 0 eng d
040 |a UIAM  |b eng  |e rda 
041 |a eng may 
050 0 |a TK7871.99.M44 
100 0 |a Rosminazuin binti Ab. Rahim,  |e author 
245 1 0 |a Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /  |c by Rosminazuin Binti Ab Rahim 
300 |a xiv, 53 leaves :  |b illustrations ;  |c 30 cm. 
336 |2 rdacontent  |a text 
337 |2 rdamedia  |a unmediated 
338 |2 rdacarrier  |a volume 
500 |a "Thesis submitted in partial fulfilment for the degree of Master of Science Microelectronics."--On title page. 
502 |a Thesis (Master of Science Microelectronics)--2014. 
504 |a Includes bibliographical references (leaves 53). 
546 |a Abstract in English and Malay. 
596 |a 1 
655 0 7 |a Theses, IIUM foreign 
710 2 |a Universiti Kebangsaan Malaysia.  |b Faculty of Electric, Electronic and System Engineering 
900 |a hj-a jt 
999 |c 438698  |d 469098 
952 |0 0  |6 T TK 007871.99 M44 R821S 2014  |7 0  |8 THESES  |9 759753  |a IIUM  |b IIUM  |c MULTIMEDIA  |g 0.00  |o t TK 7871.99 M44 R821S 2014  |p 11100323930  |r 2017-10-20  |t 1  |v 0.00  |y THESIS