http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor
Faculty of Electric, Electronic and System Engineering
"Thesis submitted in partial fulfilment for the degree of Master of Science Microelectronics."--On title page.
Thesis (Master of Science Microelectronics)--2014.
Includes bibliographical references (leaves 53).