Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /

Significance of post oxidation annealing (POA) and post metallization annealing (PMA) on the capacitance-voltage characterization of Si3N4 mos capacitor /

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書目詳細資料
主要作者:	Rosminazuin binti Ab. Rahim (Author)
格式:	Thesis
語言:	English
主題:	Theses, IIUM foreign
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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