Electrical characterisation of commercial silicon NPN bipolar junction transistors subjected to neutron and gamma radiation /

Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (...

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主要作者: Myo, Min Oo
格式: Thesis
語言:English
出版: Kuala Lumpur: Kulliyyah of Engineering, International Islamic University Malaysia, 2014
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在線閱讀:http://studentrepo.iium.edu.my/handle/123456789/4741
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050 0 0 |a TK7871.96.B55 
100 3 |a Myo, Min Oo 
245 1 |a Electrical characterisation of commercial silicon NPN bipolar junction transistors subjected to neutron and gamma radiation /  |c by Myo Min Oo 
260 |a Kuala Lumpur:   |b Kulliyyah of Engineering, International Islamic University Malaysia,   |c 2014 
300 |a xvii, 91 leaves :  |b ill. ;  |c 30cm. 
502 |a Thesis (MSEE)--International Islamic University Malaysia, 2014. 
504 |a Includes bibliographical references (leaves 77-81). 
520 |a Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (PTS) at TRIGA Mark II reactor and gamma radiation from Co-60 on silicon NPN bipolar junction transistors. Moreover, the combination of neutron and gamma radiation on devices was performed. Analyses on irradiated transistors were performed in terms of electrical characterization such as current gain, collector current (IC) and base current (IB). Experimental results showed that the current gain degraded significantly after neutron and gamma radiation. Significant current gain degradation is observed on the devices irradiated with neutron and gamma radiation. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by increasing recombination current between base and emitter depletion region. 
596 |a 1 
655 7 |a Theses, IIUM local 
690 |a Dissertations, Academic  |x Department of Electrical and Computer Engineering  |z IIUM 
710 2 |a International Islamic University Malaysia.  |b Department of Electrical and Computer Engineering 
856 4 |u http://studentrepo.iium.edu.my/handle/123456789/4741 
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