Electrical characterisation of commercial silicon NPN bipolar junction transistors subjected to neutron and gamma radiation /
Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (...
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| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
Kuala Lumpur:
Kulliyyah of Engineering, International Islamic University Malaysia,
2014
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| Subjects: | |
| Online Access: | http://studentrepo.iium.edu.my/handle/123456789/4741 |
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| LEADER | 026180000a22002770004500 | ||
|---|---|---|---|
| 008 | 140818t2014 my a g m 000 0 eng d | ||
| 040 | |a UIAM |b eng | ||
| 041 | |a eng | ||
| 043 | |a a-my--- | ||
| 050 | 0 | 0 | |a TK7871.96.B55 |
| 100 | 3 | |a Myo, Min Oo | |
| 245 | 1 | |a Electrical characterisation of commercial silicon NPN bipolar junction transistors subjected to neutron and gamma radiation / |c by Myo Min Oo | |
| 260 | |a Kuala Lumpur: |b Kulliyyah of Engineering, International Islamic University Malaysia, |c 2014 | ||
| 300 | |a xvii, 91 leaves : |b ill. ; |c 30cm. | ||
| 502 | |a Thesis (MSEE)--International Islamic University Malaysia, 2014. | ||
| 504 | |a Includes bibliographical references (leaves 77-81). | ||
| 520 | |a Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (PTS) at TRIGA Mark II reactor and gamma radiation from Co-60 on silicon NPN bipolar junction transistors. Moreover, the combination of neutron and gamma radiation on devices was performed. Analyses on irradiated transistors were performed in terms of electrical characterization such as current gain, collector current (IC) and base current (IB). Experimental results showed that the current gain degraded significantly after neutron and gamma radiation. Significant current gain degradation is observed on the devices irradiated with neutron and gamma radiation. Neutron radiation can cause displacement damage in the bulk layer of the transistor structure and gamma radiation can induce ionizing damage in the oxide layer of emitter-base depletion layer. The current gain degradation is believed to be governed by increasing recombination current between base and emitter depletion region. | ||
| 596 | |a 1 | ||
| 655 | 7 | |a Theses, IIUM local | |
| 690 | |a Dissertations, Academic |x Department of Electrical and Computer Engineering |z IIUM | ||
| 710 | 2 | |a International Islamic University Malaysia. |b Department of Electrical and Computer Engineering | |
| 856 | 4 | |u http://studentrepo.iium.edu.my/handle/123456789/4741 | |
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