Electrical characterisation of commercial silicon NPN bipolar junction transistors subjected to neutron and gamma radiation /
Electronics components such as bipolar junction transistors (BJTs), diodes etc; which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation. This research examines the effect of neutron radiation from pneumatic transfer system (...
محفوظ في:
المؤلف الرئيسي: | Myo, Min Oo |
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التنسيق: | أطروحة |
اللغة: | English |
منشور في: |
Kuala Lumpur:
Kulliyyah of Engineering, International Islamic University Malaysia,
2014
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الموضوعات: | |
الوصول للمادة أونلاين: | http://studentrepo.iium.edu.my/handle/123456789/4741 |
الوسوم: |
إضافة وسم
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مواد مشابهة
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Electrical characterisation of commercial optoelectronics diodes and quantum dot based diodes subjected to neutron radiation /
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Simulation, design, and fabrication of INP-based PNP heterojunction bipolar transistors /
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منشور في: (1999) -
Design of compound semiconductor heterojunction bipolar transistors (HBTs) for improved device performance /
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منشور في: (1996)