Geometrical analysis of light-emitting diode chip spreader contact area for enhancing efficiency /
This project focused on the theoretical investigation in constructing an electro-optics simulation for vertical Gallium Nitride (GaN) based light-emitting diode (LED) chip layers with 0.5 x 0.5 mm dimension. This aim contributes in a fundamental understanding of relation between the extraction effic...
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| Format: | Thesis |
| Language: | English |
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Kuantan, Pahang :
Kulliyyah of Science, International Islamic University Malaysia,
2019
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| Subjects: | |
| Online Access: | http://studentrepo.iium.edu.my/handle/123456789/9824 |
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| Summary: | This project focused on the theoretical investigation in constructing an electro-optics simulation for vertical Gallium Nitride (GaN) based light-emitting diode (LED) chip layers with 0.5 x 0.5 mm dimension. This aim contributes in a fundamental understanding of relation between the extraction efficiency and the epitaxial layer design which focusing on current spreader in LED chip package. This research provided a mathematical-based programming script that used to simulate the electro-optics performance of the LED chip. The simulation provides fundamental conclusive answers on how the area of current spreader can affect the extraction efficiency of the chip. Length of current spreading and light extraction efficiency was analyzed for variation of contact area. The contact area value is varied by changing the shape of the electrode and the value of width of contact area. The increase in contact area decreases light extraction efficiency as more light were absorbed by the bottom electrode surface. The effective current spreading length for Indium Tin Oxide (ITO) of thickness 300 nm is 36.44 μm. It can be concluded that the 'fork' design with multiple number of electrode strips can provide high extraction efficiency. The design provides the same current spreading as the conventional design but more area for photon to escape the chip. The results indicated that the most efficient electrode design is the design with 4 electrodes. The design has the biggest area for photon to escape the chip at 2.4574 x 10-7 m2 from the total area of chip of 2.5 x 10-7 m2. The design also enabled the highest extraction efficiency which is at 0.965. The research provided the equation for the distance between electrodes that can be used in the future development of LED. This allows the development of chip with bigger extraction efficiency, thus, enabling a brighter LED with lower power consumption. |
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| Item Description: | Abstracts in English and Arabic. "A thesis submitted in fulfilment of the requirement for the degree of Master of Science (Computational and Theoretical Sciences)." --On title page. |
| Physical Description: | xv, 63 leaves : colour illustrations ; 30cm. |
| Bibliography: | Includes bibliographical references (leaves 50-52). |