Electrical characterization of discrete SiC Schottky power diodes and converter circuits under electron radiation /
Diodes utilized in harsh radiation environment especially in outer space need to be radiation-hard to maintain the optimized electrical performance. Currently, the most used space diodes are based on Silicon. With Silicon pushed to its limit, diodes made from Silicon Carbide which are faster and tou...
Saved in:
主要作者: | Mohamad Azim bin Mohd Khairi (Author) |
---|---|
格式: | Thesis |
语言: | English |
出版: |
Kuala Lumpur :
Kulliyyah of Engineering,International Islamic University Malaysia,
2019
|
主题: | |
在线阅读: | http://studentrepo.iium.edu.my/handle/123456789/4743 |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Electrical characterization of 4H silicon carbide Schottky diodes under electron radiation /
由: Ganiyev, Sabuhi
出版: (2015) -
Schottky and Poole-Frenkel conduction mechanisms in ZrON/SiC system /
由: Vanessa Lusus
出版: (2020) -
Preparation and characterization of deposited 3C-SiC films for electronic applications /
由: Bushroa Abdul Razak
出版: (2004) -
Modeling the schottky barrier properties of graphene nanoribbon schottky diode
由: Wong, King Kiat
出版: (2014) -
Capability of silicon carbide schottky diodes as radiation detector and for X-ray photon energy harvesting
由: Nurul Syazwina Mohamed