Effect of single event upset on 6T and 12T static random access memory for different CMOS technologies /
Static random access memory cells (SRAMs) are high-speed semiconductor memory that uses a flip-flop to store each bit. Almost four decades ago, the effect of radiation on this high-speed semiconductor device was discovered when the first satellite experienced serious issues caused by the high-energy...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
Kuala Lumpur :
Kulliyyah of Engineering, International Islamic University Malaysia,
2017
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| الموضوعات: | |
| الوصول للمادة أونلاين: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
| الوسوم: |
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