Effect of single event upset on 6T and 12T static random access memory for different CMOS technologies /

Static random access memory cells (SRAMs) are high-speed semiconductor memory that uses a flip-flop to store each bit. Almost four decades ago, the effect of radiation on this high-speed semiconductor device was discovered when the first satellite experienced serious issues caused by the high-energy...

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Bibliographic Details
Main Author: Nur Syafiqah binti Yusop (Author)
Format: Thesis
Language:English
Published: Kuala Lumpur : Kulliyyah of Engineering, International Islamic University Malaysia, 2017
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Online Access:Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library.
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