Effect of single event upset on 6T and 12T static random access memory for different CMOS technologies /
Static random access memory cells (SRAMs) are high-speed semiconductor memory that uses a flip-flop to store each bit. Almost four decades ago, the effect of radiation on this high-speed semiconductor device was discovered when the first satellite experienced serious issues caused by the high-energy...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
Kuala Lumpur :
Kulliyyah of Engineering, International Islamic University Malaysia,
2017
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| 主題: | |
| 在線閱讀: | Click here to view 1st 24 pages of the thesis. Members can view fulltext at the specified PCs in the library. |
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