Electrical and optical characterization of commercial GaN and InGaN LED subjected to electron radiation /
The effects of electron radiation on light emitting diode (LED) is of great interest owing to the great need of LED as a lighting source in space, military, and extreme industrial environments. Information regarding the degradation rate of the electrical and optical properties for newer models of Ga...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
Kuala Lumpur :
Kulliyyah of Engineering, International Islamic University Malaysia,
2017
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://studentrepo.iium.edu.my/handle/123456789/4739 |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| الملخص: | The effects of electron radiation on light emitting diode (LED) is of great interest owing to the great need of LED as a lighting source in space, military, and extreme industrial environments. Information regarding the degradation rate of the electrical and optical properties for newer models of GaN/InGaN commercial LEDs subjected to electron radiation are not readily available. For this reason, this thesis aims to characterize the electrical and optical degradation rate of commercial GaN/InGaN LEDs subjected to electron radiation. The effects of electron radiation on the electrical and optical characterization of commercial Gallium Nitride (GaN) light emitting diode (LED) with doses ranging from 2MGy to 10MGy are discussed. After electron radiation, reverse leakage currents increase with a maximum magnitude of 2, suggesting the existence of displacement damage induced trap. Subsequently, it is also observed that the capacitance and carrier concentrations reduced after irradiations which were attributed to the deactivation of dopant atoms. From electroluminescence (EL) measurements, the measurement of light intensity and difference of the EL peak position is significant with increasing dose. The difference of peak intensity after radiation is primarily attributed due to the dominance of deep-level luminescence which is associated with formation of Ga vacancies that caused the existence of deep-state defect levels in the bandgap, while the degradation of light intensity is associated with radiation-induced defects. By comparing the electrical and optical characteristics of GaN/InGaN model, it is observed that the degradation caused by electron radiation may have more significant impact on the optical-based application compared to the electrical-based application. |
|---|---|
| وصف مادي: | xv, 87 leaves : illustrations ; 30cm. |
| بيبلوغرافيا: | Includes bibliographical references (leaves 84-86). |