Surface Photo Voltage Measurement Of Ultra-Violet Irradiation Effects In Oxidized Silicon Wafers
The effect of cumulative ultraviolet (UV, 4.9eV) irradiation on the p-type silicon wafers, with thermal oxide between 3.3-20.0 nm, was investigated by using the surface photo voltage (SPV) technique. All the experiments were carried out in the silicon processing plant, Shin-Etsu Handotai (M) Sdn Bhd...
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| Format: | Thesis |
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2006
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| Summary: | The effect of cumulative ultraviolet (UV, 4.9eV) irradiation on the p-type silicon wafers, with thermal oxide between 3.3-20.0 nm, was investigated by using the surface photo voltage (SPV) technique. All the experiments were carried out in the silicon processing plant, Shin-Etsu Handotai (M) Sdn Bhd, which was located in the free trade zone, Ulu Klang, Selangor. |
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