Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors

Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.

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Bibliographic Details
Main Author:	Lock, Choon Hou
Format:	Thesis
Published:	2006
Subjects:	TK7800-8360 Electronics
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id	my-mmu-ep.1113
record_format	uketd_dc
spelling	my-mmu-ep.11132010-08-23T03:55:35Z Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors 2006 Lock, Choon Hou TK7800-8360 Electronics Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect. 2006 Thesis http://shdl.mmu.edu.my/1113/ http://myto.perpun.net.my/metoalogin/logina.php masters Multimedia University Research Library
institution	Multimedia University
collection	MMU Institutional Repository
topic	TK7800-8360 Electronics
spellingShingle	TK7800-8360 Electronics Lock, Choon Hou Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
description	Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.
format	Thesis
qualification_level	Master's degree
author	Lock, Choon Hou
author_facet	Lock, Choon Hou
author_sort	Lock, Choon Hou
title	Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
title_short	Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
title_full	Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
title_fullStr	Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
title_full_unstemmed	Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors
title_sort	applicability of analytical model for modeling silicon and silicon carbide mos transistors
granting_institution	Multimedia University
granting_department	Research Library
publishDate	2006
_version_	1747829293923172352

Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors

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