Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer

Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلف الرئيسي: Koh, Song Foo
التنسيق: أطروحة
منشور في: 2014
الموضوعات:
الوسوم: إضافة وسم
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الوصف
الملخص:Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink.