Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon...
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| 格式: | Thesis |
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2014
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| 總結: | Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink. |
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