Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon...
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| التنسيق: | أطروحة |
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2014
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my-mmu-ep.57282014-09-11T06:42:49Z Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer 2014-01 Koh, Song Foo TK7800-8360 Electronics Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink. 2014-01 Thesis http://shdl.mmu.edu.my/5728/ http://library.mmu.edu.my/diglib/onlinedb/dig_lib.php phd doctoral Multimedia University Faculty of Engineering |
| institution |
Multimedia University |
| collection |
MMU Institutional Repository |
| topic |
TK7800-8360 Electronics |
| spellingShingle |
TK7800-8360 Electronics Koh, Song Foo Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| description |
Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink. |
| format |
Thesis |
| qualification_name |
Doctor of Philosophy (PhD.) |
| qualification_level |
Doctorate |
| author |
Koh, Song Foo |
| author_facet |
Koh, Song Foo |
| author_sort |
Koh, Song Foo |
| title |
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| title_short |
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| title_full |
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| title_fullStr |
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| title_full_unstemmed |
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| title_sort |
electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer |
| granting_institution |
Multimedia University |
| granting_department |
Faculty of Engineering |
| publishDate |
2014 |
| _version_ |
1747829585578295296 |