Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer

Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer

Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon...

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Main Author: Koh, Song Foo
Format: Thesis
Published: 2014
Subjects:
TK7800-8360 Electronics
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id my-mmu-ep.5728
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spelling my-mmu-ep.57282014-09-11T06:42:49Z Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer 2014-01 Koh, Song Foo TK7800-8360 Electronics Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink. 2014-01 Thesis http://shdl.mmu.edu.my/5728/ http://library.mmu.edu.my/diglib/onlinedb/dig_lib.php phd doctoral Multimedia University Faculty of Engineering
institution Multimedia University
collection MMU Institutional Repository
topic TK7800-8360 Electronics
spellingShingle TK7800-8360 Electronics
Koh, Song Foo
Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
description Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Koh, Song Foo
author_facet Koh, Song Foo
author_sort Koh, Song Foo
title Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
title_short Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
title_full Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
title_fullStr Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
title_full_unstemmed Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
title_sort electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
granting_institution Multimedia University
granting_department Faculty of Engineering
publishDate 2014
_version_ 1747829585578295296

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