Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer
Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| منشور في: |
2014
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