Dielectric properties of iron doped barium strontium titanate thin film based capacitor
In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-...
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| Format: | Thesis |
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2015
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| Summary: | In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-iron thin film deposited on copper substrate (NiFe/Cu) as bottom electrode. The as fabricated capacitor is used for storage applications like dynamic random access memory cell. The as-prepared capacitor offered a capacitance of 473.6 nF, a dielectric constant of 321 and a leakage current density of 3 pA/cm2 for ± 5 V under optimized conditions. Pulse electrodeposition technique under galvanostatic mode with ultrasonic field for different pulse current magnitudes, pulse deposition times and ultrasonic bath temperatures was used to fabricate NiFe/Cu thin film as bottom electrode. The NiFe/Cu thin film optimum deposition conditions were found to be at a current magnitude of 80 mA, a deposition time of 3 min and at an ultrasonic bath temperature of 27C which had the atomic percentage of 79.2% Ni and 20.8% Fe, surface roughness of 4.71 nm, resistivity of 9.4 µ.O.cm and average grain size of 41.95 nm. Over the optimization study, it was observed that ultrasonic bath at room temperature with a short deposition time reduced the average grain size, surface roughness and hence the film resistivity. |
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