Dielectric properties of iron doped barium strontium titanate thin film based capacitor

Dielectric properties of iron doped barium strontium titanate thin film based capacitor

In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-...

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Main Author: Ayad, Abdo Thabit Saeed
Format: Thesis
Published: 2015
Subjects:
TK7895.M4 Memory systems
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spelling my-mmu-ep.63392016-06-09T08:56:23Z Dielectric properties of iron doped barium strontium titanate thin film based capacitor 2015-11 Ayad, Abdo Thabit Saeed TK7895.M4 Memory systems In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-iron thin film deposited on copper substrate (NiFe/Cu) as bottom electrode. The as fabricated capacitor is used for storage applications like dynamic random access memory cell. The as-prepared capacitor offered a capacitance of 473.6 nF, a dielectric constant of 321 and a leakage current density of 3 pA/cm2 for ± 5 V under optimized conditions. Pulse electrodeposition technique under galvanostatic mode with ultrasonic field for different pulse current magnitudes, pulse deposition times and ultrasonic bath temperatures was used to fabricate NiFe/Cu thin film as bottom electrode. The NiFe/Cu thin film optimum deposition conditions were found to be at a current magnitude of 80 mA, a deposition time of 3 min and at an ultrasonic bath temperature of 27C which had the atomic percentage of 79.2% Ni and 20.8% Fe, surface roughness of 4.71 nm, resistivity of 9.4 µ.O.cm and average grain size of 41.95 nm. Over the optimization study, it was observed that ultrasonic bath at room temperature with a short deposition time reduced the average grain size, surface roughness and hence the film resistivity. 2015-11 Thesis http://shdl.mmu.edu.my/6339/ http://library.mmu.edu.my/diglib/onlinedb/dig_lib.php masters Multimedia University Faculty of Engineering
institution Multimedia University
collection MMU Institutional Repository
topic TK7895.M4 Memory systems
spellingShingle TK7895.M4 Memory systems
Ayad, Abdo Thabit Saeed
Dielectric properties of iron doped barium strontium titanate thin film based capacitor
description In this research work, a new capacitor stack aluminium/iron doped barium strontium titanate/nickel iron/copper (Al/BSTF/NiFe/Cu) has been designed and fabricated with aluminium (Al) as top electrode, iron doped barium strontium titanate (Ba 1-x Sr x Ti 1-y Fe y O3) as dielectric material and nickel-iron thin film deposited on copper substrate (NiFe/Cu) as bottom electrode. The as fabricated capacitor is used for storage applications like dynamic random access memory cell. The as-prepared capacitor offered a capacitance of 473.6 nF, a dielectric constant of 321 and a leakage current density of 3 pA/cm2 for ± 5 V under optimized conditions. Pulse electrodeposition technique under galvanostatic mode with ultrasonic field for different pulse current magnitudes, pulse deposition times and ultrasonic bath temperatures was used to fabricate NiFe/Cu thin film as bottom electrode. The NiFe/Cu thin film optimum deposition conditions were found to be at a current magnitude of 80 mA, a deposition time of 3 min and at an ultrasonic bath temperature of 27C which had the atomic percentage of 79.2% Ni and 20.8% Fe, surface roughness of 4.71 nm, resistivity of 9.4 µ.O.cm and average grain size of 41.95 nm. Over the optimization study, it was observed that ultrasonic bath at room temperature with a short deposition time reduced the average grain size, surface roughness and hence the film resistivity.
format Thesis
qualification_level Master's degree
author Ayad, Abdo Thabit Saeed
author_facet Ayad, Abdo Thabit Saeed
author_sort Ayad, Abdo Thabit Saeed
title Dielectric properties of iron doped barium strontium titanate thin film based capacitor
title_short Dielectric properties of iron doped barium strontium titanate thin film based capacitor
title_full Dielectric properties of iron doped barium strontium titanate thin film based capacitor
title_fullStr Dielectric properties of iron doped barium strontium titanate thin film based capacitor
title_full_unstemmed Dielectric properties of iron doped barium strontium titanate thin film based capacitor
title_sort dielectric properties of iron doped barium strontium titanate thin film based capacitor
granting_institution Multimedia University
granting_department Faculty of Engineering
publishDate 2015
_version_ 1747829632388825088

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