Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP

A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+...

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Main Author:	You , Ah Heng
Format:	Thesis
Published:	2005
Subjects:	QA299.6-433 Analysis
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id	my-mmu-ep.840
record_format	uketd_dc
spelling	my-mmu-ep.8402010-07-06T06:29:45Z Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP 2005-05 You , Ah Heng QA299.6-433 Analysis A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+ diodes are presented. A realistic FUll Band Monte Carlo (FBMC) model using empirical local pseudopotential band structure is used to simulate multiplication gain, excess noise factor and time response of InP p+ -i-n+ diodes. A simple and fast Random Path Length (RPL) model incorporating the dead-space effect is developed to reproduce the avalanche characteristics of short InP p+ -i-n+ diodes. 2005-05 Thesis http://shdl.mmu.edu.my/840/ http://myto.perpun.net.my/metoalogin/logina.php phd doctoral Multimedia University Research Library
institution	Multimedia University
collection	MMU Institutional Repository
topic	QA299.6-433 Analysis
spellingShingle	QA299.6-433 Analysis You , Ah Heng Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
description	A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+ diodes are presented. A realistic FUll Band Monte Carlo (FBMC) model using empirical local pseudopotential band structure is used to simulate multiplication gain, excess noise factor and time response of InP p+ -i-n+ diodes. A simple and fast Random Path Length (RPL) model incorporating the dead-space effect is developed to reproduce the avalanche characteristics of short InP p+ -i-n+ diodes.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	You , Ah Heng
author_facet	You , Ah Heng
author_sort	You , Ah Heng
title	Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
title_short	Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
title_full	Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
title_fullStr	Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
title_full_unstemmed	Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
title_sort	monte carlo simulations of avalanche multiplication, noise and speed in submicron inp
granting_institution	Multimedia University
granting_department	Research Library
publishDate	2005
_version_	1747829228953403392

Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP

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