Monte Carlo Simulations Of Avalanche Multiplication, Noise And Speed In Submicron InP
A stochastic nature of avalanche photodiode (APD) model is developed using Monte Carlo method to study the avalanche characteristics in submicron InP p= -i- n+ diodes. The avalanche characteristics such as multiplication gain, excess noise factor and avalanche built-up time in submicron InP p+ -i-n+...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2005
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|