Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers

Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers

In microelectronics, cost reduction and improved performance requires device miniaturization in the ultra large scale integration (ULSI) chip. The consequence is that minute structural defects and contamination, not previously considered, on the silicon wafer become increasingly critical to the devi...

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Main Author: Lee , Wah Pheng
Format: Thesis
Published: 2005
Subjects:
TK7800-8360 Electronics
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id my-mmu-ep.856
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spelling my-mmu-ep.8562010-07-06T04:11:54Z Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers 2005-07 Lee , Wah Pheng TK7800-8360 Electronics In microelectronics, cost reduction and improved performance requires device miniaturization in the ultra large scale integration (ULSI) chip. The consequence is that minute structural defects and contamination, not previously considered, on the silicon wafer become increasingly critical to the device reliability and manufacturing yield. While the contamination may be removed from the silicon surface by wet cleaning, the grown-in defects will not be cleaned. The latter includes the truncated voids which appear as pits on the polished surface, and are often known as the crystal-originated "particles" (COPs). 2005-07 Thesis http://shdl.mmu.edu.my/856/ http://myto.perpun.net.my/metoalogin/logina.php phd doctoral Multimedia University Research Library
institution Multimedia University
collection MMU Institutional Repository
topic TK7800-8360 Electronics
spellingShingle TK7800-8360 Electronics
Lee , Wah Pheng
Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
description In microelectronics, cost reduction and improved performance requires device miniaturization in the ultra large scale integration (ULSI) chip. The consequence is that minute structural defects and contamination, not previously considered, on the silicon wafer become increasingly critical to the device reliability and manufacturing yield. While the contamination may be removed from the silicon surface by wet cleaning, the grown-in defects will not be cleaned. The latter includes the truncated voids which appear as pits on the polished surface, and are often known as the crystal-originated "particles" (COPs).
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Lee , Wah Pheng
author_facet Lee , Wah Pheng
author_sort Lee , Wah Pheng
title Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
title_short Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
title_full Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
title_fullStr Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
title_full_unstemmed Optical Scattering Detection And Characterisation Of Crystal Originated Particles In Czochralski-Grown Silicon Wafers
title_sort optical scattering detection and characterisation of crystal originated particles in czochralski-grown silicon wafers
granting_institution Multimedia University
granting_department Research Library
publishDate 2005
_version_ 1747829232857251840

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