Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.
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| Format: | Thesis |
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2004
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| Summary: | In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer. |
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