Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer

Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer

In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.

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Bibliographic Details
Main Author: Lee, Beng Gee
Format: Thesis
Published: 2004
Subjects:
QD Chemistry
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id my-mmu-ep.959
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spelling my-mmu-ep.9592010-07-14T02:31:10Z Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer 2004 Lee, Beng Gee QD Chemistry In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer. 2004 Thesis http://shdl.mmu.edu.my/959/ http://myto.perpun.net.my/metoalogin/logina.php masters Multimedia University Research Library
institution Multimedia University
collection MMU Institutional Repository
topic QD Chemistry
spellingShingle QD Chemistry
Lee, Beng Gee
Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
description In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.
format Thesis
qualification_level Master's degree
author Lee, Beng Gee
author_facet Lee, Beng Gee
author_sort Lee, Beng Gee
title Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_short Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_full Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_fullStr Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_full_unstemmed Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
title_sort computer simulations of void and oxide precipitate in hydrogen-annealed silicon wafer
granting_institution Multimedia University
granting_department Research Library
publishDate 2004
_version_ 1747829273034489856

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