Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer
In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
2004
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|