Performance analysis of a wideband LNA utilizing 0.18um technology with HBM ESD Protection / Nor Aida Nordin
The following report presents the performance analysis of wideband low noise amplifier (LNA) design circuits utilizing 0.18]uin CMOS technology. The objective of this performed analysis of a LNA design that need achieve sufficiently large gain and low noise figure, compare the design with other desi...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2010
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| 主題: | |
| 在線閱讀: | https://ir.uitm.edu.my/id/eprint/102745/2/102745.pdf |
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| 總結: | The following report presents the performance analysis of wideband low noise amplifier (LNA) design circuits utilizing 0.18]uin CMOS technology. The objective of this performed analysis of a LNA design that need achieve sufficiently large gain and low noise figure, compare the design with other design, and to verify the effect of parameter Rr and Ls to S-parameter. This LNA design was expected to achieve a peak power gain of 13.8 dB. Within the 3 dB bandwidth from 2.6 GHz to 6.6 GHz, the noise figure (NF) is in a range of 4.0 dB to 6.5 dB and the input reflection coefficient, Sn is below -13.0dB.The standard specification for LNA with bandwidth from 2.6GHz is ISDB. This usually used for digital audio and video broadcasting application. By using Cadence Virtuoso as an EDA tool as a simulation tool, the result are obtained. The simulation result had almost achieved the target and this analysis had performed successfully simulation. |
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