Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip

This paper presents the study on the effect of doping process on the PMOS structure using Silvaco TCAD Tools. This research done by dope the P-type material into the polysilicon to observe the electrical properties and performance of PMOS structure at constant dose concentration of 3.0el I (/cm5) an...

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Main Author:	Zulhanip, Aida Zulia
Format:	Thesis
Language:	English
Published:	2007
Subjects:	Application software
Online Access:	https://ir.uitm.edu.my/id/eprint/102925/1/102925.pdf
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id	my-uitm-ir.102925
record_format	uketd_dc
spelling	my-uitm-ir.1029252024-11-12T08:43:58Z Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip 2007 Zulhanip, Aida Zulia Application software This paper presents the study on the effect of doping process on the PMOS structure using Silvaco TCAD Tools. This research done by dope the P-type material into the polysilicon to observe the electrical properties and performance of PMOS structure at constant dose concentration of 3.0el I (/cm5) and temperature to 950 °C using Silvaco TCAD Tools Software. By choosing the P-type materials such as Boron and Gallium, the result due to electrical performance will be appearing in the graph of ID versus VG and Id versus VD graph in Atlas Device Simulation. To study the material penetration and depletion, the graph of concentration (/cm3) versus depth (p.m) will be shown in Tony plot structure. Both of these results are needed to compare the suitable materials used in conducting electricity of PMOS. Dopant material doped in polysilicon will provide the advantage of a good ohmic contact with the wafer silicon and can be oxidized to form an insulating layer. 2007 Thesis https://ir.uitm.edu.my/id/eprint/102925/ https://ir.uitm.edu.my/id/eprint/102925/1/102925.pdf text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	Application software
spellingShingle	Application software Zulhanip, Aida Zulia Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
description	This paper presents the study on the effect of doping process on the PMOS structure using Silvaco TCAD Tools. This research done by dope the P-type material into the polysilicon to observe the electrical properties and performance of PMOS structure at constant dose concentration of 3.0el I (/cm5) and temperature to 950 °C using Silvaco TCAD Tools Software. By choosing the P-type materials such as Boron and Gallium, the result due to electrical performance will be appearing in the graph of ID versus VG and Id versus VD graph in Atlas Device Simulation. To study the material penetration and depletion, the graph of concentration (/cm3) versus depth (p.m) will be shown in Tony plot structure. Both of these results are needed to compare the suitable materials used in conducting electricity of PMOS. Dopant material doped in polysilicon will provide the advantage of a good ohmic contact with the wafer silicon and can be oxidized to form an insulating layer.
format	Thesis
qualification_level	Bachelor degree
author	Zulhanip, Aida Zulia
author_facet	Zulhanip, Aida Zulia
author_sort	Zulhanip, Aida Zulia
title	Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
title_short	Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
title_full	Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
title_fullStr	Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
title_full_unstemmed	Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip
title_sort	study the effect of doping process on the pmos structure using silvaco tcad tools / aida zulia zulhanip
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	https://ir.uitm.edu.my/id/eprint/102925/1/102925.pdf
_version_	1818588062504976384

Study the effect of doping process on the PMOS structure using silvaco TCAD tools / Aida Zulia Zulhanip

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