Baharom, A. H. (2010). Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom.
Chicago Style (17th ed.) CitationBaharom, Abu Hudzaifah. Investigation of Shallow Trench Isolation and Silicide Effect on 90nm CMOS Devices / Abu Hudzaifah Baharom. 2010.
MLA引文Baharom, Abu Hudzaifah. Investigation of Shallow Trench Isolation and Silicide Effect on 90nm CMOS Devices / Abu Hudzaifah Baharom. 2010.
警告:这些引文格式不一定是100%准确.