Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom

Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom

Strained technology is used to enhance the performance of the CMOS that involves physically stretching or compressing the silicon crystal lattice, which in turn increasing carrier mobility without having to make them smaller. Shallow-trench isolation (STI) and silicidation process is the way of stra...

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书目详细资料
主要作者:	Baharom, Abu Hudzaifah
格式:	Thesis
语言:	English
出版:	2010
在线阅读:	https://ir.uitm.edu.my/id/eprint/102995/1/102995.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

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