Investigation of shallow trench isolation and silicide effect on 90nm CMOS devices / Abu Hudzaifah Baharom
Strained technology is used to enhance the performance of the CMOS that involves physically stretching or compressing the silicon crystal lattice, which in turn increasing carrier mobility without having to make them smaller. Shallow-trench isolation (STI) and silicidation process is the way of stra...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2010
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| 在線閱讀: | https://ir.uitm.edu.my/id/eprint/102995/1/102995.pdf |
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