Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin

The reported memristive device fabrication methods that offer precise deposition technique are expensive and include of multiple fabrication steps. It is also lack of exposition on how to improve the memristive behavior in terms of creating the oxygen vacancies in its active layer, and to relate the...

Full description

Saved in:

Bibliographic Details
Main Author:	Zainodin @ Zainuddin, Aznilinda
Format:	Thesis
Language:	English
Published:	2014
Subjects:	Electronics
Online Access:	https://ir.uitm.edu.my/id/eprint/16091/1/TM_AZNILINDA%20ZAINUDDIN%20EE%2014_5.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-uitm-ir.16091
record_format	uketd_dc
spelling	my-uitm-ir.160912022-07-12T02:55:39Z Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin 2014 Zainodin @ Zainuddin, Aznilinda Electronics The reported memristive device fabrication methods that offer precise deposition technique are expensive and include of multiple fabrication steps. It is also lack of exposition on how to improve the memristive behavior in terms of creating the oxygen vacancies in its active layer, and to relate the ionic mechanism to the I-V hysteresis loop. This work demonstrated a simple and effective process of memristive device fabrication using RF magnetron sputtering method. A study on the effect of different processes in fabricating titania active layer with lower oxygen content using three different methods which are plasma treatment, HF-etch and annealing process was carried out. This work also consists of a study on a few different fabrication structures and how the I-V hysteresis curve of each device structure can be explained in a number of mobile ionic movement mechanisms. The physical properties of the fabrication were analyzed using Field Emission Scanning Electron Microscope (FESEM) with Energy Dispersive X-ray Spectroscopy (EDS) system embedded, Atomic Force Microscopy (AFM) and Surface Profiler (SP). The memristive behavior current-voltage (I-V) measurement was conducted using 2-Point Probe with a voltage sweep from 0 V to -5 V, -5 V to 5 V then back to 0 V and another voltage sweep from -5 V to 5 V then back to -5 V. From the work done, we managed to identify the best fabrication device structure that also exhibit good memristive behavior. 2014 Thesis https://ir.uitm.edu.my/id/eprint/16091/ https://ir.uitm.edu.my/id/eprint/16091/1/TM_AZNILINDA%20ZAINUDDIN%20EE%2014_5.pdf text en public mphil masters Universiti Teknologi MARA Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	Electronics
spellingShingle	Electronics Zainodin @ Zainuddin, Aznilinda Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
description	The reported memristive device fabrication methods that offer precise deposition technique are expensive and include of multiple fabrication steps. It is also lack of exposition on how to improve the memristive behavior in terms of creating the oxygen vacancies in its active layer, and to relate the ionic mechanism to the I-V hysteresis loop. This work demonstrated a simple and effective process of memristive device fabrication using RF magnetron sputtering method. A study on the effect of different processes in fabricating titania active layer with lower oxygen content using three different methods which are plasma treatment, HF-etch and annealing process was carried out. This work also consists of a study on a few different fabrication structures and how the I-V hysteresis curve of each device structure can be explained in a number of mobile ionic movement mechanisms. The physical properties of the fabrication were analyzed using Field Emission Scanning Electron Microscope (FESEM) with Energy Dispersive X-ray Spectroscopy (EDS) system embedded, Atomic Force Microscopy (AFM) and Surface Profiler (SP). The memristive behavior current-voltage (I-V) measurement was conducted using 2-Point Probe with a voltage sweep from 0 V to -5 V, -5 V to 5 V then back to 0 V and another voltage sweep from -5 V to 5 V then back to -5 V. From the work done, we managed to identify the best fabrication device structure that also exhibit good memristive behavior.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Zainodin @ Zainuddin, Aznilinda
author_facet	Zainodin @ Zainuddin, Aznilinda
author_sort	Zainodin @ Zainuddin, Aznilinda
title	Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
title_short	Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
title_full	Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
title_fullStr	Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
title_full_unstemmed	Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin
title_sort	fabrication of titania-based memristive device using rf magnetron sputtering method / aznilinda zainuddin
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Electrical Engineering
publishDate	2014
url	https://ir.uitm.edu.my/id/eprint/16091/1/TM_AZNILINDA%20ZAINUDDIN%20EE%2014_5.pdf
_version_	1783733480418443264

Fabrication of titania-based memristive device using RF magnetron sputtering method / Aznilinda Zainuddin

Similar Items