Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan

Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposi...

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Main Author: Hikmee Mahzan, Norhidayatul
Format: Thesis
Language:English
Published: 2015
Online Access:https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf
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spelling my-uitm-ir.184302022-03-10T07:06:54Z Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan 2015 Hikmee Mahzan, Norhidayatul Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications. 2015 Thesis https://ir.uitm.edu.my/id/eprint/18430/ https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf text en public mphil masters Universiti Teknologi MARA Faculty of Electrical Engineering
institution Universiti Teknologi MARA
collection UiTM Institutional Repository
language English
description Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications.
format Thesis
qualification_name Master of Philosophy (M.Phil.)
qualification_level Master's degree
author Hikmee Mahzan, Norhidayatul
spellingShingle Hikmee Mahzan, Norhidayatul
Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
author_facet Hikmee Mahzan, Norhidayatul
author_sort Hikmee Mahzan, Norhidayatul
title Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_short Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_fullStr Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full_unstemmed Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_sort synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by rf magnetron sputtering / norhidayatul hikmee mahzan
granting_institution Universiti Teknologi MARA
granting_department Faculty of Electrical Engineering
publishDate 2015
url https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf
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