Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan

Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposi...

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Main Author:	Hikmee Mahzan, Norhidayatul
Format:	Thesis
Language:	English
Published:	2015
Online Access:	https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf
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id	my-uitm-ir.18430
record_format	uketd_dc
spelling	my-uitm-ir.184302022-03-10T07:06:54Z Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan 2015 Hikmee Mahzan, Norhidayatul Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications. 2015 Thesis https://ir.uitm.edu.my/id/eprint/18430/ https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf text en public mphil masters Universiti Teknologi MARA Faculty of Electrical Engineering
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
description	Studies on the growth of nanocrystalline silicon (nc-Si) on teflon substrate are being studied. The preparation was done by using direct deposition of Radiofrequency (RF) magnetron sputtering method. The physical and crystallinity of thin films was studied and investigated to focus on various deposition parameters such as RF power, deposition temperature, sputtering pressure and argon gas flow rate. The physical structures of the thin films were observed by using field emission scanning electron microscope (FESEM), JOEL JSM 7600F and Surface Profiler (SP, KLA Tencor P-6). The crystallinity of the thin films was observed by Raman spectroscopy (Horiba Jobin Yvon). Through the investigation, we found that at room temperature, the deposited thin film was amorphous, however, crystallization started to occur when the substrate was heated, resulting that the deposited thin fdms are nc-Si thin films. The film thickness and the deposition rate increased with a substrate temperature except for the room temperature deposition. The grains seemed to be more dense for the deposition at higher temperature compared to the lower temperature. We also found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results is shown that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and teflon substrate. From optimization result, the nc-Si thin films deposited at RF power 200 W, deposition temperatures 150 °C, sputtering pressure 7 mTorr and 40 seem Ar gas flow rate, which gives the highest crystallinity based on Raman shift results compared to others thin films. In this thesis we also studied on the resistive switching on the nc-Si sub-oxide for memristive device applications.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Hikmee Mahzan, Norhidayatul
spellingShingle	Hikmee Mahzan, Norhidayatul Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
author_facet	Hikmee Mahzan, Norhidayatul
author_sort	Hikmee Mahzan, Norhidayatul
title	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_short	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_fullStr	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_full_unstemmed	Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan
title_sort	synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by rf magnetron sputtering / norhidayatul hikmee mahzan
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Electrical Engineering
publishDate	2015
url	https://ir.uitm.edu.my/id/eprint/18430/2/TM_NORHIDAYATUL%20HIKMEE%20MAHZAN%20EE%2015_5.pdf
_version_	1783733679090040832

Synthesis and characterization of nanocrystalline silicon thin films on teflon substrates by RF magnetron sputtering / Norhidayatul Hikmee Mahzan

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