Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman

Amorphous carbon (a-C) is expected to be an excellent material for fabricating low cost and high efficiency carbon based solar cells because of its interesting properties and feasibility of band gap engineering over a wide range. The preparation of a-C thin films was carried out by using thermal che...

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Main Author:	Kamaruzaman, Dayana
Format:	Thesis
Language:	English
Published:	2013
Subjects:	Apparatus and materials Applications of electronics
Online Access:	https://ir.uitm.edu.my/id/eprint/20428/6/20428.pdf
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id	my-uitm-ir.20428
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spelling	my-uitm-ir.204282022-12-06T07:10:48Z Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman 2013 Kamaruzaman, Dayana Apparatus and materials Applications of electronics Amorphous carbon (a-C) is expected to be an excellent material for fabricating low cost and high efficiency carbon based solar cells because of its interesting properties and feasibility of band gap engineering over a wide range. The preparation of a-C thin films was carried out by using thermal chemical vapor deposition (CVD) technique. The initial phase of this work involved the deposition of a-C thin films using camphor oil as an environmentally carbon precursor. The second phase is focused on the doping process of a-C thin films with iodine (I) as p-type dopant. The studies were done to determine the optimum parameters to obtain a p-type a-C:I thin film. The deposition temperature, deposition time and gas flow rate effects on the properties of a-C thin films were analyzed in details. The a-C thin films deposited at 550°C, 30 min and 35 seem were considered as the best parameters throughout this work . For doping process, the a-C:I thin films is found to be influenced by doping temperature, amount of iodine and doping time effects. Based on the results, the a-C:I thin film prepared at 400°C, l.Og and 10 min can be considered as the optimized parameter to produce higher conductivity (-10' S.cm’ ) and lower optical band gap. The optimum preparation parameters for a-C and a-C:I thin films have been identified. Comparison between without and with iodine doping on a-C thin film properties have also been studied. Hetero-junction of both films fabricated with n-Si found photovoltaic behavior. 2013 Thesis https://ir.uitm.edu.my/id/eprint/20428/ https://ir.uitm.edu.my/id/eprint/20428/6/20428.pdf text en public mphil masters Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Mahmood, Mohamad Rusop
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Mahmood, Mohamad Rusop
topic	Apparatus and materials Applications of electronics
spellingShingle	Apparatus and materials Applications of electronics Kamaruzaman, Dayana Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
description	Amorphous carbon (a-C) is expected to be an excellent material for fabricating low cost and high efficiency carbon based solar cells because of its interesting properties and feasibility of band gap engineering over a wide range. The preparation of a-C thin films was carried out by using thermal chemical vapor deposition (CVD) technique. The initial phase of this work involved the deposition of a-C thin films using camphor oil as an environmentally carbon precursor. The second phase is focused on the doping process of a-C thin films with iodine (I) as p-type dopant. The studies were done to determine the optimum parameters to obtain a p-type a-C:I thin film. The deposition temperature, deposition time and gas flow rate effects on the properties of a-C thin films were analyzed in details. The a-C thin films deposited at 550°C, 30 min and 35 seem were considered as the best parameters throughout this work . For doping process, the a-C:I thin films is found to be influenced by doping temperature, amount of iodine and doping time effects. Based on the results, the a-C:I thin film prepared at 400°C, l.Og and 10 min can be considered as the optimized parameter to produce higher conductivity (-10' S.cm’ ) and lower optical band gap. The optimum preparation parameters for a-C and a-C:I thin films have been identified. Comparison between without and with iodine doping on a-C thin film properties have also been studied. Hetero-junction of both films fabricated with n-Si found photovoltaic behavior.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Kamaruzaman, Dayana
author_facet	Kamaruzaman, Dayana
author_sort	Kamaruzaman, Dayana
title	Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
title_short	Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
title_full	Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
title_fullStr	Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
title_full_unstemmed	Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman
title_sort	iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / dayana kamaruzaman
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2013
url	https://ir.uitm.edu.my/id/eprint/20428/6/20428.pdf
_version_	1783733730106408960

Iodine doping of amorphous carbon thin films deposited using camphoric carbon precursor / Dayana Kamaruzaman

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