Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari

This thesis presents the metal oxide-based memristive device intended for sensor application. Sol-gel spin coating technique was proposed as a simple method to fabricate the Ti02-based and ZnO-based memristive devices. These devices were compared for their performances by investigating their propert...

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Main Author:	Shaari, Nor Azira Akma
Format:	Thesis
Language:	English
Published:	2017
Subjects:	Apparatus and materials
Online Access:	https://ir.uitm.edu.my/id/eprint/39284/1/39284.pdf
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id	my-uitm-ir.39284
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spelling	my-uitm-ir.392842021-08-30T02:59:11Z Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari 2017-10 Shaari, Nor Azira Akma Apparatus and materials This thesis presents the metal oxide-based memristive device intended for sensor application. Sol-gel spin coating technique was proposed as a simple method to fabricate the Ti02-based and ZnO-based memristive devices. These devices were compared for their performances by investigating their properties characterization. Lateral configuration memristive device was also proposed to investigate its capability of resistive switching. Both vertical and lateral configurations of memristive devices were discussed. Spin coating speed, annealing time and temperature were varied for vertical configuration memristive devices. Meanwhile, oxide width and electrodes width are varied for lateral configuration memristive devices. Samples produced were characterized for its resistive switching and supported by their physical properties characteristics. It was found that ZnO-based and Ti02-based memristive devices with spin coating speed of 3D00 rpm, annealed 350 °C for 1 hour are the optimized samples with resistance ratios of 1.96 and 3.233 respectively. Meanwhile, for the lateral configuration of Ti02-based memristive device with oxide width of 0.1cm and electrodes width of 1cm is the optimized sample. Sensing capability of these metaloxides memristive devices were also investigated and it was proven that TiC>2 is suitable for UV sensor application as opposed to ZnO. Electroforming process was carried out to determine the suitable voltage sweep for metal oxides in order to avoid irreversible damage to the samples. Measurement cycles were carried out to observe the memristive devices' reproducibility. The effect of polarity of voltage was also explored to observe the switching capability of the memristive device under different polarity bias application. 2017-10 Thesis https://ir.uitm.edu.my/id/eprint/39284/ https://ir.uitm.edu.my/id/eprint/39284/1/39284.pdf text en public masters Universiti Teknologi MARA Faculty of Electrical Engineering Herman, Sukreen Hana (Dr.)
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Herman, Sukreen Hana (Dr.)
topic	Apparatus and materials
spellingShingle	Apparatus and materials Shaari, Nor Azira Akma Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
description	This thesis presents the metal oxide-based memristive device intended for sensor application. Sol-gel spin coating technique was proposed as a simple method to fabricate the Ti02-based and ZnO-based memristive devices. These devices were compared for their performances by investigating their properties characterization. Lateral configuration memristive device was also proposed to investigate its capability of resistive switching. Both vertical and lateral configurations of memristive devices were discussed. Spin coating speed, annealing time and temperature were varied for vertical configuration memristive devices. Meanwhile, oxide width and electrodes width are varied for lateral configuration memristive devices. Samples produced were characterized for its resistive switching and supported by their physical properties characteristics. It was found that ZnO-based and Ti02-based memristive devices with spin coating speed of 3D00 rpm, annealed 350 °C for 1 hour are the optimized samples with resistance ratios of 1.96 and 3.233 respectively. Meanwhile, for the lateral configuration of Ti02-based memristive device with oxide width of 0.1cm and electrodes width of 1cm is the optimized sample. Sensing capability of these metaloxides memristive devices were also investigated and it was proven that TiC>2 is suitable for UV sensor application as opposed to ZnO. Electroforming process was carried out to determine the suitable voltage sweep for metal oxides in order to avoid irreversible damage to the samples. Measurement cycles were carried out to observe the memristive devices' reproducibility. The effect of polarity of voltage was also explored to observe the switching capability of the memristive device under different polarity bias application.
format	Thesis
qualification_level	Master's degree
author	Shaari, Nor Azira Akma
author_facet	Shaari, Nor Azira Akma
author_sort	Shaari, Nor Azira Akma
title	Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
title_short	Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
title_full	Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
title_fullStr	Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
title_full_unstemmed	Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari
title_sort	metal oxides-based memristive devices: fabrication and characterizations / nor azira akma shaari
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Electrical Engineering
publishDate	2017
url	https://ir.uitm.edu.my/id/eprint/39284/1/39284.pdf
_version_	1783734501217665024

Metal oxides-based memristive devices: fabrication and characterizations / Nor Azira Akma Shaari

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