Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device. A MOSFET is most commonly used in the field of power electronics. Silicon dioxide (Si02) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which plays a very important role in transistor operation....

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Main Author:	Zahaimi, Nurul Arina
Format:	Thesis
Language:	English
Published:	2011
Subjects:	Electricity and magnetism
Online Access:	https://ir.uitm.edu.my/id/eprint/45468/1/45468.pdf
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id	my-uitm-ir.45468
record_format	uketd_dc
spelling	my-uitm-ir.454682022-12-08T06:27:07Z Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi 2011 Zahaimi, Nurul Arina Electricity and magnetism A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device. A MOSFET is most commonly used in the field of power electronics. Silicon dioxide (Si02) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which plays a very important role in transistor operation. Growing Si02 on the wafer substrate can be done by two methods which are by dry and wet oxidation. Hence, this study is to determine the quality of gate oxide produced in the lab and to study the effect of different thicknesses of oxide on MOSFET I-V characteristics. The NMOS is tested with respect to the ideal IV curve characteristic. 2011 Thesis https://ir.uitm.edu.my/id/eprint/45468/ https://ir.uitm.edu.my/id/eprint/45468/1/45468.pdf text en public degree Universiti Teknologi MARA Faculty of Applied Sciences
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
topic	Electricity and magnetism
spellingShingle	Electricity and magnetism Zahaimi, Nurul Arina Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
description	A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device. A MOSFET is most commonly used in the field of power electronics. Silicon dioxide (Si02) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which plays a very important role in transistor operation. Growing Si02 on the wafer substrate can be done by two methods which are by dry and wet oxidation. Hence, this study is to determine the quality of gate oxide produced in the lab and to study the effect of different thicknesses of oxide on MOSFET I-V characteristics. The NMOS is tested with respect to the ideal IV curve characteristic.
format	Thesis
qualification_level	Bachelor degree
author	Zahaimi, Nurul Arina
author_facet	Zahaimi, Nurul Arina
author_sort	Zahaimi, Nurul Arina
title	Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
title_short	Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
title_full	Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
title_fullStr	Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
title_full_unstemmed	Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi
title_sort	co relation study of gate oxide thickness and mosfet i-v characteristic / nurul arina zahaimi
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Applied Sciences
publishDate	2011
url	https://ir.uitm.edu.my/id/eprint/45468/1/45468.pdf
_version_	1783734739249659904

Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi

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