Free space microwave measurement of permittivity of gate dielectric for semiconductor technology / Fatimah ‘Audah Md. Zaki
A non-destructive and non-contacting technique for measuring the relative permittivity of an epitaxial layer on semiconductor has been developed. The samples were thermally grown SiO2 of different dopants and thicknesses. The measurement set up consists of spot-focusing horn antennas and a vector ne...
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| Format: | Thesis |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/54161/1/54161.pdf |
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