The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan

A promising candidate for transparent conductive electrode materials is the thin film of poly(3,4-ethylenedioxythiophene)(polystyrene sulfonate) (PEDOT: PSS) and gra-phene oxide (GO) . Spin coating technique was used in this research to produce thin films from PEDOT: PSS / GO. Graphene oxide sheets...

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Main Author:	Sarkhan, Nur Afifah
Format:	Thesis
Language:	English
Published:	2021
Subjects:	Nanostructures
Online Access:	https://ir.uitm.edu.my/id/eprint/59717/1/59717.pdf
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spelling	my-uitm-ir.597172022-05-17T06:04:38Z The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan 2021-02 Sarkhan, Nur Afifah Nanostructures A promising candidate for transparent conductive electrode materials is the thin film of poly(3,4-ethylenedioxythiophene)(polystyrene sulfonate) (PEDOT: PSS) and gra-phene oxide (GO) . Spin coating technique was used in this research to produce thin films from PEDOT: PSS / GO. Graphene oxide sheets have been spread uniformly in PEDOT: PSS aqueous solution. The fabricated PEDOT:PSS/GO thin films have demonstrated an outstanding electrical properties. The electrical conductivity of PE-DOT:PSS thin films have achieved 35.80 S/cm, which have been increased about 5 times when 5% of graphene oxide was added into the solution. This exceptional im-provement is attributed to the higher carrier mobility, because GO interacts with PE-DOT via π-π stacking and hydrogen bonding. The solution-processing of PE-DOT:PSS/GO was simplified in this experiment to promote the commercialization of economical flexible electronic devices. The best optical band gap is obtained from PEDOT:PSS/5%GO which is 4.37 eV. Electrical characterization of the Schottky di-odes device was performed using current–voltage (I–V) measurements. The Schottky diodes showed good rectifying behaviour. Fascinatingly, for 5% doping of GO, the Schottky diode showed the best diode characteristics with an ideality factor, η of 2.79 and barrier height, Фb 0.5949 eV compared with pristine PEDOT:PSS Schottky diode of 4.25 of ideality factor, η and barrier height of 0.4913 eV. The embedded GO in PEDOT:PSS improves the conductivity of thin films, as well as optical band gap which subsequently enhance its electrical performance in Schottky diode devices. Thus, PEDOT:PSS/5%GO shows better performance compared to pristine PE-DOT:PSS 2021-02 Thesis https://ir.uitm.edu.my/id/eprint/59717/ https://ir.uitm.edu.my/id/eprint/59717/1/59717.pdf text en public masters Universiti Teknologi MARA Faculty of Applied Sciences Abdul Rahman, Zurianti (Dr.) Ali, Malik Marwan (Prof. Madya Dr.) Zakaria, Azlan
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Abdul Rahman, Zurianti (Dr.) Ali, Malik Marwan (Prof. Madya Dr.) Zakaria, Azlan
topic	Nanostructures
spellingShingle	Nanostructures Sarkhan, Nur Afifah The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
description	A promising candidate for transparent conductive electrode materials is the thin film of poly(3,4-ethylenedioxythiophene)(polystyrene sulfonate) (PEDOT: PSS) and gra-phene oxide (GO) . Spin coating technique was used in this research to produce thin films from PEDOT: PSS / GO. Graphene oxide sheets have been spread uniformly in PEDOT: PSS aqueous solution. The fabricated PEDOT:PSS/GO thin films have demonstrated an outstanding electrical properties. The electrical conductivity of PE-DOT:PSS thin films have achieved 35.80 S/cm, which have been increased about 5 times when 5% of graphene oxide was added into the solution. This exceptional im-provement is attributed to the higher carrier mobility, because GO interacts with PE-DOT via π-π stacking and hydrogen bonding. The solution-processing of PE-DOT:PSS/GO was simplified in this experiment to promote the commercialization of economical flexible electronic devices. The best optical band gap is obtained from PEDOT:PSS/5%GO which is 4.37 eV. Electrical characterization of the Schottky di-odes device was performed using current–voltage (I–V) measurements. The Schottky diodes showed good rectifying behaviour. Fascinatingly, for 5% doping of GO, the Schottky diode showed the best diode characteristics with an ideality factor, η of 2.79 and barrier height, Фb 0.5949 eV compared with pristine PEDOT:PSS Schottky diode of 4.25 of ideality factor, η and barrier height of 0.4913 eV. The embedded GO in PEDOT:PSS improves the conductivity of thin films, as well as optical band gap which subsequently enhance its electrical performance in Schottky diode devices. Thus, PEDOT:PSS/5%GO shows better performance compared to pristine PE-DOT:PSS
format	Thesis
qualification_level	Master's degree
author	Sarkhan, Nur Afifah
author_facet	Sarkhan, Nur Afifah
author_sort	Sarkhan, Nur Afifah
title	The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
title_short	The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
title_full	The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
title_fullStr	The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
title_full_unstemmed	The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan
title_sort	electrical and optical studies of graphene oxide doped pedot: pss thin film / nur afifah sarkhan
granting_institution	Universiti Teknologi MARA
granting_department	Faculty of Applied Sciences
publishDate	2021
url	https://ir.uitm.edu.my/id/eprint/59717/1/59717.pdf
_version_	1783735049979428864

The electrical and optical studies of graphene oxide doped pedot: pss thin film / Nur Afifah Sarkhan

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