Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini

Microwave non-destructive testing (MNDT) using free space microwave measurement (FSMM) system is used to characterize silicon semiconductor wafers from reflection and transmission coefficients. The FSMM system consists of transmit and receive spot-focusing horn lens antenna, mode transitions, coaxia...

Full description

Saved in:

Bibliographic Details
Main Author:	Azini, Alyaa Syaza
Format:	Thesis
Language:	English
Published:	2011
Subjects:	Microwave communication systems Antennas
Online Access:	https://ir.uitm.edu.my/id/eprint/68104/1/68104.PDF
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-uitm-ir.68104
record_format	uketd_dc
spelling	my-uitm-ir.681042022-10-31T08:45:22Z Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini 2011 Azini, Alyaa Syaza Microwave communication systems Antennas Microwave non-destructive testing (MNDT) using free space microwave measurement (FSMM) system is used to characterize silicon semiconductor wafers from reflection and transmission coefficients. The FSMM system consists of transmit and receive spot-focusing horn lens antenna, mode transitions, coaxial cables and a vector network analyzer (VNA). The resistivity and conductivity of silicon wafers can be obtained from the complex permittivity. In this project, results for p-type high resistivity silicon wafer before and after doping was measured. The FSMM setup was modeled using CST Microwave Studio simulation and the simulation results were then compared with the measurement. Simulation results of doping concentration using tsuprem conducted by Mr. Mohd Rosydi Zakaria from Universiti Malaysia Perlis, (uniMAP) were used in this project to make comparison with FSMM technique. In this project, it was found that the dielectric constant, loss factor and conductivity of doped wafer were higher than the undoped wafer. In addition, it was observed that the resistivity decreased with increased frequencies 2011 Thesis https://ir.uitm.edu.my/id/eprint/68104/ https://ir.uitm.edu.my/id/eprint/68104/1/68104.PDF text en public degree Universiti Teknologi MARA (UiTM) Faculty of Electrical Engineering Baba, Noor Hasimah
institution	Universiti Teknologi MARA
collection	UiTM Institutional Repository
language	English
advisor	Baba, Noor Hasimah
topic	Microwave communication systems Antennas
spellingShingle	Microwave communication systems Antennas Azini, Alyaa Syaza Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
description	Microwave non-destructive testing (MNDT) using free space microwave measurement (FSMM) system is used to characterize silicon semiconductor wafers from reflection and transmission coefficients. The FSMM system consists of transmit and receive spot-focusing horn lens antenna, mode transitions, coaxial cables and a vector network analyzer (VNA). The resistivity and conductivity of silicon wafers can be obtained from the complex permittivity. In this project, results for p-type high resistivity silicon wafer before and after doping was measured. The FSMM setup was modeled using CST Microwave Studio simulation and the simulation results were then compared with the measurement. Simulation results of doping concentration using tsuprem conducted by Mr. Mohd Rosydi Zakaria from Universiti Malaysia Perlis, (uniMAP) were used in this project to make comparison with FSMM technique. In this project, it was found that the dielectric constant, loss factor and conductivity of doped wafer were higher than the undoped wafer. In addition, it was observed that the resistivity decreased with increased frequencies
format	Thesis
qualification_level	Bachelor degree
author	Azini, Alyaa Syaza
author_facet	Azini, Alyaa Syaza
author_sort	Azini, Alyaa Syaza
title	Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
title_short	Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
title_full	Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
title_fullStr	Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
title_full_unstemmed	Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini
title_sort	free-space microwave measurement of doping concentration for silicon wafer / alyaa syaza azini
granting_institution	Universiti Teknologi MARA (UiTM)
granting_department	Faculty of Electrical Engineering
publishDate	2011
url	https://ir.uitm.edu.my/id/eprint/68104/1/68104.PDF
_version_	1783735754253402112

Free-space microwave measurement of doping concentration for silicon wafer / Alyaa Syaza Azini

Similar Items